N-Channel MOSFET, 5.5 A, 400 V, 3-Pin TO-220AB Vishay Siliconix IRF730APBF
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Country of Origin
China
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P.O.A.
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
50
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products