Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

RS Stock No.: 144-5248Brand: ToshibaManufacturers Part No.: TTD1415B,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

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₹ 73.71

Each (In a Pack of 10) (Exc. GST)

₹ 86.978

Each (In a Pack of 10) (Including GST)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

10

Available in multiples of 10
10₹ 737.10
20₹ 1,474.20
30₹ 1,948.50
40₹ 2,598.00
50₹ 3,247.50
60₹ 3,897.00
70₹ 4,546.50
80₹ 5,196.00
90₹ 5,845.50
100₹ 6,495.00
110₹ 7,144.50
120₹ 7,794.00
130₹ 8,443.50
140₹ 9,093.00
150₹ 9,742.50
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 73.71

Each (In a Pack of 10) (Exc. GST)

₹ 86.978

Each (In a Pack of 10) (Including GST)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Stock information temporarily unavailable.

10

Available in multiples of 10
10₹ 737.10
20₹ 1,474.20
30₹ 1,948.50
40₹ 2,598.00
50₹ 3,247.50
60₹ 3,897.00
70₹ 4,546.50
80₹ 5,196.00
90₹ 5,845.50
100₹ 6,495.00
110₹ 7,144.50
120₹ 7,794.00
130₹ 8,443.50
140₹ 9,093.00
150₹ 9,742.50

Buy in bulk

quantityUnit pricePer Pack
10 - 20₹ 73.71₹ 737.10
30+₹ 64.95₹ 649.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more