Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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Please check again later.
₹ 86.91
Each (In a Pack of 5) (Exc. GST)
₹ 102.554
Each (In a Pack of 5) (Including GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 86.91
Each (In a Pack of 5) (Exc. GST)
₹ 102.554
Each (In a Pack of 5) (Including GST)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₹ 86.91 | ₹ 434.55 |
25+ | ₹ 78.28 | ₹ 391.40 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details