Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS

RS Stock No.: 144-5244Brand: ToshibaManufacturers Part No.: TTC3710B,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

12 A

Maximum Collector Emitter Voltage

80 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Maximum Power Dissipation

30 W

Minimum DC Current Gain

120

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

80 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

NPN Power Transistors, Toshiba

Bipolar Transistors, Toshiba

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Stock information temporarily unavailable.

₹ 332.45

₹ 66.49 Each (In a Pack of 5) (Exc. GST)

₹ 392.29

₹ 78.458 Each (In a Pack of 5) (inc. GST)

Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS

5

Available in multiples of 5
5₹ 332.45
10₹ 664.90
15₹ 997.35
20₹ 1,329.80
25₹ 1,589.00
30₹ 1,906.80
35₹ 2,224.60
40₹ 2,542.40
45₹ 2,860.20
50₹ 3,178.00
55₹ 3,495.80
60₹ 3,813.60
65₹ 4,131.40
70₹ 4,449.20
75₹ 4,767.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 332.45

₹ 66.49 Each (In a Pack of 5) (Exc. GST)

₹ 392.29

₹ 78.458 Each (In a Pack of 5) (inc. GST)

Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 332.45
10₹ 664.90
15₹ 997.35
20₹ 1,329.80
25₹ 1,589.00
30₹ 1,906.80
35₹ 2,224.60
40₹ 2,542.40
45₹ 2,860.20
50₹ 3,178.00
55₹ 3,495.80
60₹ 3,813.60
65₹ 4,131.40
70₹ 4,449.20
75₹ 4,767.00

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20₹ 66.49₹ 332.45
25+₹ 63.56₹ 317.80

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

12 A

Maximum Collector Emitter Voltage

80 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Maximum Power Dissipation

30 W

Minimum DC Current Gain

120

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

80 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

NPN Power Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more