Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
80 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details
MOSFET Transistors, Toshiba
₹ 451.20
₹ 22.56 Each (In a Pack of 20) (Exc. GST)
₹ 532.42
₹ 26.621 Each (In a Pack of 20) (inc. GST)
20
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 451.20
₹ 22.56 Each (In a Pack of 20) (Exc. GST)
₹ 532.42
₹ 26.621 Each (In a Pack of 20) (inc. GST)
Stock information temporarily unavailable.
20
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
80 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details


