Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

RS Stock No.: 133-2811Brand: ToshibaManufacturers Part No.: TPN11003NL,LQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 495.00

₹ 24.75 Each (In a Pack of 20) (Exc. GST)

₹ 584.10

₹ 29.205 Each (In a Pack of 20) (inc. GST)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 495.00

₹ 24.75 Each (In a Pack of 20) (Exc. GST)

₹ 584.10

₹ 29.205 Each (In a Pack of 20) (inc. GST)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
20 - 80₹ 24.75₹ 495.00
100 - 180₹ 20.04₹ 400.80
200 - 980₹ 19.64₹ 392.80
1000 - 1980₹ 14.13₹ 282.60
2000+₹ 13.85₹ 277.00

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more