Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

RS Stock No.: 133-2809Brand: ToshibaManufacturers Part No.: TPH11006NL,LQ(SDistrelec Article No.: 30409221
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 734.00

₹ 36.70 Each (In a Pack of 20) (Exc. GST)

₹ 866.12

₹ 43.306 Each (In a Pack of 20) (inc. GST)

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 734.00

₹ 36.70 Each (In a Pack of 20) (Exc. GST)

₹ 866.12

₹ 43.306 Each (In a Pack of 20) (inc. GST)

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

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Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more