Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Pack of 8) (Exc. GST)
Standard
8
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
Each (In a Pack of 8) (Exc. GST)
Standard
8
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Country of Origin
China
Product details