Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
₹ 1,032.60
₹ 51.63 Each (In a Pack of 20) (Exc. GST)
₹ 1,218.47
₹ 60.923 Each (In a Pack of 20) (inc. GST)
20
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,032.60
₹ 51.63 Each (In a Pack of 20) (Exc. GST)
₹ 1,218.47
₹ 60.923 Each (In a Pack of 20) (inc. GST)
Stock information temporarily unavailable.
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 40 | ₹ 51.63 | ₹ 1,032.60 |
| 60+ | ₹ 46.50 | ₹ 930.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Country of Origin
Japan
Product details


