Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

RS Stock No.: 125-0563Brand: ToshibaManufacturers Part No.: TK31E60X,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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₹ 373.44

₹ 186.72 Each (In a Pack of 2) (Exc. GST)

₹ 440.66

₹ 220.33 Each (In a Pack of 2) (inc. GST)

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

2

Available in multiples of 2
2₹ 373.44
4₹ 746.88
6₹ 1,120.32
8₹ 1,493.76
10₹ 1,867.20
12₹ 2,240.64
14₹ 2,614.08
16₹ 2,987.52
18₹ 3,360.96
20₹ 3,734.40
22₹ 4,107.84
24₹ 4,481.28
26₹ 4,854.72
28₹ 5,228.16
30₹ 5,601.60
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 373.44

₹ 186.72 Each (In a Pack of 2) (Exc. GST)

₹ 440.66

₹ 220.33 Each (In a Pack of 2) (inc. GST)

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

Stock information temporarily unavailable.

2

Available in multiples of 2
2₹ 373.44
4₹ 746.88
6₹ 1,120.32
8₹ 1,493.76
10₹ 1,867.20
12₹ 2,240.64
14₹ 2,614.08
16₹ 2,987.52
18₹ 3,360.96
20₹ 3,734.40
22₹ 4,107.84
24₹ 4,481.28
26₹ 4,854.72
28₹ 5,228.16
30₹ 5,601.60

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more