Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
₹ 679.75
₹ 135.95 Each (In a Pack of 5) (Exc. GST)
₹ 802.11
₹ 160.421 Each (In a Pack of 5) (inc. GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 679.75
₹ 135.95 Each (In a Pack of 5) (Exc. GST)
₹ 802.11
₹ 160.421 Each (In a Pack of 5) (inc. GST)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₹ 135.95 | ₹ 679.75 |
25 - 45 | ₹ 129.96 | ₹ 649.80 |
50 - 120 | ₹ 126.24 | ₹ 631.20 |
125 - 245 | ₹ 122.74 | ₹ 613.70 |
250+ | ₹ 117.83 | ₹ 589.15 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details