N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O

RS Stock No.: 133-2798Brand: ToshibaManufacturers Part No.: TK15S04N1L,LQ(O
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₹ 337.45

₹ 67.49 Each (In a Pack of 5) (Exc. GST)

₹ 398.19

₹ 79.638 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₹ 337.45
10₹ 674.90
15₹ 1,012.35
20₹ 1,349.80
25₹ 1,612.75
30₹ 1,935.30
35₹ 2,257.85
40₹ 2,580.40
45₹ 2,902.95
50₹ 3,133.50
55₹ 3,446.85
60₹ 3,760.20
65₹ 4,073.55
70₹ 4,386.90
75₹ 4,700.25
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 337.45

₹ 67.49 Each (In a Pack of 5) (Exc. GST)

₹ 398.19

₹ 79.638 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₹ 337.45
10₹ 674.90
15₹ 1,012.35
20₹ 1,349.80
25₹ 1,612.75
30₹ 1,935.30
35₹ 2,257.85
40₹ 2,580.40
45₹ 2,902.95
50₹ 3,133.50
55₹ 3,446.85
60₹ 3,760.20
65₹ 4,073.55
70₹ 4,386.90
75₹ 4,700.25

Buy in bulk

quantityUnit pricePer Pack
5 - 20₹ 67.49₹ 337.45
25 - 45₹ 64.51₹ 322.55
50 - 245₹ 62.67₹ 313.35
250 - 495₹ 60.93₹ 304.65
500+₹ 58.49₹ 292.45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more