N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

RS Stock No.: 125-0532Brand: ToshibaManufacturers Part No.: TK10A60W,S4VX(M
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 66.45

Each (In a Pack of 5) (Exc. GST)

₹ 78.411

Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

5

Available in multiples of 5
5₹ 332.25
10₹ 664.50
15₹ 996.75
20₹ 1,329.00
25₹ 1,587.75
30₹ 1,905.30
35₹ 2,222.85
40₹ 2,540.40
45₹ 2,857.95
50₹ 3,085.00
55₹ 3,393.50
60₹ 3,702.00
65₹ 4,010.50
70₹ 4,319.00
75₹ 4,627.50
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 66.45

Each (In a Pack of 5) (Exc. GST)

₹ 78.411

Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 332.25
10₹ 664.50
15₹ 996.75
20₹ 1,329.00
25₹ 1,587.75
30₹ 1,905.30
35₹ 2,222.85
40₹ 2,540.40
45₹ 2,857.95
50₹ 3,085.00
55₹ 3,393.50
60₹ 3,702.00
65₹ 4,010.50
70₹ 4,319.00
75₹ 4,627.50

Buy in bulk

quantityUnit pricePer Pack
5 - 20₹ 66.45₹ 332.25
25 - 45₹ 63.51₹ 317.55
50 - 120₹ 61.70₹ 308.50
125 - 245₹ 59.99₹ 299.95
250+₹ 57.59₹ 287.95

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more