N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

RS Stock No.: 125-0532Brand: ToshibaManufacturers Part No.: TK10A60W,S4VX(M
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₹ 581.25

₹ 116.25 Each (In a Pack of 5) (Exc. GST)

₹ 685.87

₹ 137.175 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

5

Available in multiples of 5
5₹ 581.25
10₹ 1,162.50
15₹ 1,743.75
20₹ 2,325.00
25₹ 1,946.75
30₹ 2,336.10
35₹ 2,725.45
40₹ 3,114.80
45₹ 3,504.15
50₹ 3,778.00
55₹ 4,155.80
60₹ 4,533.60
65₹ 4,911.40
70₹ 5,289.20
75₹ 5,667.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 581.25

₹ 116.25 Each (In a Pack of 5) (Exc. GST)

₹ 685.87

₹ 137.175 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 581.25
10₹ 1,162.50
15₹ 1,743.75
20₹ 2,325.00
25₹ 1,946.75
30₹ 2,336.10
35₹ 2,725.45
40₹ 3,114.80
45₹ 3,504.15
50₹ 3,778.00
55₹ 4,155.80
60₹ 4,533.60
65₹ 4,911.40
70₹ 5,289.20
75₹ 5,667.00

Buy in bulk

quantityUnit pricePer Pack
5 - 20₹ 116.25₹ 581.25
25 - 45₹ 77.87₹ 389.35
50 - 120₹ 75.56₹ 377.80
125 - 245₹ 73.55₹ 367.75
250+₹ 71.27₹ 356.35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more