Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 540.85
₹ 540.85 Each (Exc. GST)
₹ 638.20
₹ 638.20 Each (inc. GST)
Standard
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 540.85
₹ 540.85 Each (Exc. GST)
₹ 638.20
₹ 638.20 Each (inc. GST)
Standard
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 9 | ₹ 540.85 |
| 10 - 49 | ₹ 457.00 |
| 50 - 124 | ₹ 445.82 |
| 125 - 249 | ₹ 441.63 |
| 250+ | ₹ 431.84 |
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Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products