Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)

RS Stock No.: 185-580Brand: ToshibaManufacturers Part No.: 2SK4017(Q)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

2SK

Package Type

PW Mold2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

5.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₹ 335.00

₹ 16.75 Each (In a Pack of 20) (Exc. GST)

₹ 395.30

₹ 19.765 Each (In a Pack of 20) (inc. GST)

Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 335.00

₹ 16.75 Each (In a Pack of 20) (Exc. GST)

₹ 395.30

₹ 19.765 Each (In a Pack of 20) (inc. GST)

Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 40₹ 16.75₹ 335.00
60 - 100₹ 16.59₹ 331.80
120 - 220₹ 16.42₹ 328.40
240 - 460₹ 16.26₹ 325.20
480+₹ 16.09₹ 321.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

2SK

Package Type

PW Mold2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

5.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more