Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
₹ 1,006.25
₹ 201.25 Each (In a Pack of 5) (Exc. GST)
₹ 1,187.37
₹ 237.475 Each (In a Pack of 5) (inc. GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,006.25
₹ 201.25 Each (In a Pack of 5) (Exc. GST)
₹ 1,187.37
₹ 237.475 Each (In a Pack of 5) (inc. GST)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₹ 201.25 | ₹ 1,006.25 |
| 25 - 45 | ₹ 156.07 | ₹ 780.35 |
| 50 - 95 | ₹ 151.38 | ₹ 756.90 |
| 100 - 245 | ₹ 149.33 | ₹ 746.65 |
| 250+ | ₹ 148.15 | ₹ 740.75 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details


