Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
₹ 1,057.60
₹ 211.52 Each (In a Pack of 5) (Exc. GST)
₹ 1,247.97
₹ 249.594 Each (In a Pack of 5) (inc. GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,057.60
₹ 211.52 Each (In a Pack of 5) (Exc. GST)
₹ 1,247.97
₹ 249.594 Each (In a Pack of 5) (inc. GST)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₹ 211.52 | ₹ 1,057.60 |
| 25 - 45 | ₹ 207.41 | ₹ 1,037.05 |
| 50 - 95 | ₹ 203.31 | ₹ 1,016.55 |
| 100 - 245 | ₹ 198.90 | ₹ 994.50 |
| 250+ | ₹ 195.09 | ₹ 975.45 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details


