Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

RS Stock No.: 890-2686Brand: ToshibaManufacturers Part No.: 2SK3564,S5Q(J
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.9V

Country of Origin

Malaysia

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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₹ 670.10

₹ 134.02 Each (In a Pack of 5) (Exc. GST)

₹ 790.72

₹ 158.144 Each (In a Pack of 5) (inc. GST)

Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 670.10

₹ 134.02 Each (In a Pack of 5) (Exc. GST)

₹ 790.72

₹ 158.144 Each (In a Pack of 5) (inc. GST)

Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 20₹ 134.02₹ 670.10
25 - 45₹ 131.17₹ 655.85
50 - 95₹ 128.58₹ 642.90
100 - 245₹ 126.00₹ 630.00
250+₹ 123.67₹ 618.35

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.9V

Country of Origin

Malaysia

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more