N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

RS Stock No.: 145-1334Brand: Texas InstrumentsManufacturers Part No.: CSD19534KCS
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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₹ 103.37

Each (In a Tube of 50) (Exc. GST)

₹ 121.977

Each (In a Tube of 50) (Including GST)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 103.37

Each (In a Tube of 50) (Exc. GST)

₹ 121.977

Each (In a Tube of 50) (Including GST)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Stock information temporarily unavailable.
sticker-1112

Buy in bulk

quantityUnit pricePer Tube
50 - 50₹ 103.37₹ 5,168.50
100 - 200₹ 88.24₹ 4,412.00
250 - 450₹ 86.04₹ 4,302.00
500 - 700₹ 83.94₹ 4,197.00
750+₹ 81.34₹ 4,067.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more