Texas Instruments N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B

RS Stock No.: 827-4870Brand: Texas InstrumentsManufacturers Part No.: CSD18502Q5B
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₹ 914.30

₹ 182.86 Each (In a Pack of 5) (Exc. GST)

₹ 1,078.87

₹ 215.775 Each (In a Pack of 5) (inc. GST)

Texas Instruments N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
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RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 914.30

₹ 182.86 Each (In a Pack of 5) (Exc. GST)

₹ 1,078.87

₹ 215.775 Each (In a Pack of 5) (inc. GST)

Texas Instruments N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Stock information temporarily unavailable.
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quantityUnit pricePer Pack
5 - 20₹ 182.86₹ 914.30
25 - 45₹ 175.34₹ 876.70
50 - 120₹ 170.67₹ 853.35
125 - 245₹ 170.14₹ 850.70
250+₹ 168.01₹ 840.05

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more