P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

RS Stock No.: 171-3616Brand: Taiwan SemiconductorManufacturers Part No.: TSM2309CX RFG
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage

1V

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P.O.A.

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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P.O.A.

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage

1V