STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

RS Stock No.: 103-1986Brand: STMicroelectronicsManufacturers Part No.: STW11NM80
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Transistor Material

Si

Height

20.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₹ 8,764.50

₹ 292.15 Each (In a Tube of 30) (Exc. GST)

₹ 10,342.11

₹ 344.737 Each (In a Tube of 30) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 8,764.50

₹ 292.15 Each (In a Tube of 30) (Exc. GST)

₹ 10,342.11

₹ 344.737 Each (In a Tube of 30) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

Stock information temporarily unavailable.

sticker-1112

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Transistor Material

Si

Height

20.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more