STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z

RS Stock No.: 485-8572Brand: STMicroelectronicsManufacturers Part No.: STW10NK80Z
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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N-channel MOSFET,2SK2607 9A 800V
P.O.A.Each (Exc. GST)

₹ 418.32

₹ 418.32 Each (Exc. GST)

₹ 493.62

₹ 493.62 Each (inc. GST)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z
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RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 418.32

₹ 418.32 Each (Exc. GST)

₹ 493.62

₹ 493.62 Each (inc. GST)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z

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QuantityUnit price
1 - 9₹ 418.32
10 - 24₹ 414.14
25 - 99₹ 410.00
100 - 499₹ 405.90
500+₹ 401.84

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N-channel MOSFET,2SK2607 9A 800V
P.O.A.Each (Exc. GST)

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,2SK2607 9A 800V
P.O.A.Each (Exc. GST)