Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₹ 386.86
₹ 386.86 Each (Exc. GST)
₹ 456.49
₹ 456.49 Each (inc. GST)
Standard
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 386.86
₹ 386.86 Each (Exc. GST)
₹ 456.49
₹ 456.49 Each (inc. GST)
Standard
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | ₹ 386.86 |
5 - 9 | ₹ 383.00 |
10 - 24 | ₹ 379.17 |
25 - 49 | ₹ 375.37 |
50+ | ₹ 371.62 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.