Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
₹ 11,233.00
₹ 224.66 Each (In a Tube of 50) (Exc. GST)
₹ 13,254.94
₹ 265.099 Each (In a Tube of 50) (inc. GST)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 11,233.00
₹ 224.66 Each (In a Tube of 50) (Exc. GST)
₹ 13,254.94
₹ 265.099 Each (In a Tube of 50) (inc. GST)
Stock information temporarily unavailable.
50

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


