Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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Stock information temporarily unavailable.
₹ 188,600.00
₹ 47.15 Each (On a Reel of 4000) (Exc. GST)
₹ 222,548.00
₹ 55.637 Each (On a Reel of 4000) (inc. GST)
4000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 188,600.00
₹ 47.15 Each (On a Reel of 4000) (Exc. GST)
₹ 222,548.00
₹ 55.637 Each (On a Reel of 4000) (inc. GST)
Stock information temporarily unavailable.
4000
Ideate. Create. Collaborate
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
