Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
₹ 1,448.30
₹ 144.83 Each (Supplied on a Reel) (Exc. GST)
₹ 1,708.99
₹ 170.899 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,448.30
₹ 144.83 Each (Supplied on a Reel) (Exc. GST)
₹ 1,708.99
₹ 170.899 Each (Supplied on a Reel) (inc. GST)
Stock information temporarily unavailable.
Production pack (Reel)
10
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.