Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Series
STripFET F3
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₹ 467,250.00
₹ 155.75 Each (On a Reel of 3000) (Exc. GST)
₹ 551,355.00
₹ 183.785 Each (On a Reel of 3000) (inc. GST)
3000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 467,250.00
₹ 155.75 Each (On a Reel of 3000) (Exc. GST)
₹ 551,355.00
₹ 183.785 Each (On a Reel of 3000) (inc. GST)
Stock information temporarily unavailable.
3000

Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Series
STripFET F3
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


