Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
₹ 1,219.70
₹ 121.97 Each (In a Pack of 10) (Exc. GST)
₹ 1,439.25
₹ 143.925 Each (In a Pack of 10) (inc. GST)
Standard
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,219.70
₹ 121.97 Each (In a Pack of 10) (Exc. GST)
₹ 1,439.25
₹ 143.925 Each (In a Pack of 10) (inc. GST)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


