Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
75W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
5.4 mm
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₹ 314,250.00
₹ 104.75 Each (On a Reel of 3000) (Exc. GST)
₹ 370,815.00
₹ 123.605 Each (On a Reel of 3000) (inc. GST)
3000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 314,250.00
₹ 104.75 Each (On a Reel of 3000) (Exc. GST)
₹ 370,815.00
₹ 123.605 Each (On a Reel of 3000) (inc. GST)
Stock information temporarily unavailable.
3000

Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
75W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
5.4 mm
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


