Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
STripFET H7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Width
6.35mm
Transistor Material
Si
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
₹ 890.65
₹ 178.13 Each (Supplied as a Tape) (Exc. GST)
₹ 1,050.97
₹ 210.193 Each (Supplied as a Tape) (inc. GST)
Standard
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 890.65
₹ 178.13 Each (Supplied as a Tape) (Exc. GST)
₹ 1,050.97
₹ 210.193 Each (Supplied as a Tape) (inc. GST)
Standard
5

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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
STripFET H7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Width
6.35mm
Transistor Material
Si
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.