Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Stock information temporarily unavailable.
₹ 65,979.00
₹ 659.79 Each (Supplied on a Reel) (Exc. GST)
₹ 77,855.22
₹ 778.552 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 65,979.00
₹ 659.79 Each (Supplied on a Reel) (Exc. GST)
₹ 77,855.22
₹ 778.552 Each (Supplied on a Reel) (inc. GST)
Stock information temporarily unavailable.
Production pack (Reel)
100
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 490 | ₹ 659.79 | ₹ 6,597.90 |
| 500 - 990 | ₹ 650.88 | ₹ 6,508.80 |
| 1000+ | ₹ 633.75 | ₹ 6,337.50 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.