Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
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Stock information temporarily unavailable.
₹ 734.76
₹ 734.76 Each (Exc. GST)
₹ 867.02
₹ 867.02 Each (inc. GST)
Standard
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 734.76
₹ 734.76 Each (Exc. GST)
₹ 867.02
₹ 867.02 Each (inc. GST)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | ₹ 734.76 |
| 10 - 99 | ₹ 678.38 |
| 100 - 499 | ₹ 659.79 |
| 500 - 999 | ₹ 650.88 |
| 1000+ | ₹ 633.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
