STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

RS Stock No.: 829-4666PBrand: STMicroelectronicsManufacturers Part No.: STGWT60H65DFB
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Technical Document

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

375W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

₹ 461.59

₹ 461.59 Each (Supplied in a Tube) (Exc. GST)

₹ 544.68

₹ 544.676 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
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Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 461.59
2₹ 923.18
3₹ 1,384.77
4₹ 1,846.36
5₹ 2,307.95
6₹ 2,769.54
7₹ 3,231.13
8₹ 3,692.72
9₹ 4,154.31
10₹ 4,615.90
11₹ 5,077.49
12₹ 5,539.08
13₹ 6,000.67
14₹ 6,462.26
15₹ 6,923.85

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 461.59

₹ 461.59 Each (Supplied in a Tube) (Exc. GST)

₹ 544.68

₹ 544.676 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 461.59
2₹ 923.18
3₹ 1,384.77
4₹ 1,846.36
5₹ 2,307.95
6₹ 2,769.54
7₹ 3,231.13
8₹ 3,692.72
9₹ 4,154.31
10₹ 4,615.90
11₹ 5,077.49
12₹ 5,539.08
13₹ 6,000.67
14₹ 6,462.26
15₹ 6,923.85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

375W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more