STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole

RS Stock No.: 792-5814Brand: STMicroelectronicsManufacturers Part No.: STGW80H65DFB
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

₹ 704.84

₹ 704.84 Each (Exc. GST)

₹ 831.71

₹ 831.71 Each (inc. GST)

STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 704.84
2₹ 1,409.68
3₹ 2,114.52
4₹ 2,819.36
5₹ 3,524.20
6₹ 4,229.04
7₹ 4,933.88
8₹ 5,638.72
9₹ 6,343.56
10₹ 7,048.40
11₹ 7,753.24
12₹ 8,458.08
13₹ 9,162.92
14₹ 9,867.76
15₹ 10,572.60

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 704.84

₹ 704.84 Each (Exc. GST)

₹ 831.71

₹ 831.71 Each (inc. GST)

STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 704.84
2₹ 1,409.68
3₹ 2,114.52
4₹ 2,819.36
5₹ 3,524.20
6₹ 4,229.04
7₹ 4,933.88
8₹ 5,638.72
9₹ 6,343.56
10₹ 7,048.40
11₹ 7,753.24
12₹ 8,458.08
13₹ 9,162.92
14₹ 9,867.76
15₹ 10,572.60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more