STMicroelectronics, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₹ 7,477.00
₹ 149.54 Each (Supplied on a Reel) (Exc. GST)
₹ 8,822.86
₹ 176.457 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 7,477.00
₹ 149.54 Each (Supplied on a Reel) (Exc. GST)
₹ 8,822.86
₹ 176.457 Each (Supplied on a Reel) (inc. GST)
Stock information temporarily unavailable.
Production pack (Reel)
50
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 100 | ₹ 149.54 | ₹ 3,738.50 |
| 125 - 225 | ₹ 147.65 | ₹ 3,691.25 |
| 250+ | ₹ 145.80 | ₹ 3,645.00 |
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products