Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
₹ 143.44
Each (Supplied on a Reel) (Exc. GST)
₹ 169.259
Each (Supplied on a Reel) (Including GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 143.44
Each (Supplied on a Reel) (Exc. GST)
₹ 169.259
Each (Supplied on a Reel) (Including GST)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 25 | ₹ 143.44 | ₹ 3,586.00 |
50 - 100 | ₹ 140.57 | ₹ 3,514.25 |
125 - 225 | ₹ 129.72 | ₹ 3,243.00 |
250+ | ₹ 128.10 | ₹ 3,202.50 |
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.