STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Height
4.6mm
Standards/Approvals
No
Series
Automotive Grade
Automotive Standard
AEC-Q101
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
P.O.A.
Each (Supplied on a Reel) (Exc. GST)
Production pack (Reel)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
Each (Supplied on a Reel) (Exc. GST)
Stock information temporarily unavailable.
Production pack (Reel)
5
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Height
4.6mm
Standards/Approvals
No
Series
Automotive Grade
Automotive Standard
AEC-Q101
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products