Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
2.4mm
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
₹ 181,625.00
₹ 72.65 Each (On a Reel of 2500) (Exc. GST)
₹ 214,317.50
₹ 85.727 Each (On a Reel of 2500) (inc. GST)
2500
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 181,625.00
₹ 72.65 Each (On a Reel of 2500) (Exc. GST)
₹ 214,317.50
₹ 85.727 Each (On a Reel of 2500) (inc. GST)
Stock information temporarily unavailable.
2500

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
2.4mm
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


