Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
110nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Country of Origin
Malaysia
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₹ 354,000.00
₹ 354.00 Each (On a Reel of 1000) (Exc. GST)
₹ 417,720.00
₹ 417.72 Each (On a Reel of 1000) (inc. GST)
1000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 354,000.00
₹ 354.00 Each (On a Reel of 1000) (Exc. GST)
₹ 417,720.00
₹ 417.72 Each (On a Reel of 1000) (inc. GST)
Stock information temporarily unavailable.
1000

Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
110nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Country of Origin
Malaysia
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


