Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
₹ 6,657.76
₹ 6,657.76 Each (Exc. GST)
₹ 7,856.16
₹ 7,856.16 Each (inc. GST)
Standard
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 6,657.76
₹ 6,657.76 Each (Exc. GST)
₹ 7,856.16
₹ 7,856.16 Each (inc. GST)
Standard
1
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.