Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Stock information temporarily unavailable.
₹ 2,918.91
₹ 2,918.91 Each (Exc. GST)
₹ 3,444.31
₹ 3,444.31 Each (inc. GST)
Standard
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 2,918.91
₹ 2,918.91 Each (Exc. GST)
₹ 3,444.31
₹ 3,444.31 Each (inc. GST)
Stock information temporarily unavailable.
Standard
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.