STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

RS Stock No.: 907-4741PBrand: STMicroelectronicsManufacturers Part No.: SCT30N120
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

200°C

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
View all in MOSFETs

Stock information temporarily unavailable.

₹ 2,730.66

₹ 2,730.66 Each (Supplied in a Tube) (Exc. GST)

₹ 3,222.18

₹ 3,222.179 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 2,730.66
2₹ 5,461.32
3₹ 8,191.98
4₹ 10,922.64
5₹ 13,653.30
6₹ 16,383.96
7₹ 19,114.62
8₹ 21,845.28
9₹ 24,575.94
10₹ 27,306.60
11₹ 30,037.26
12₹ 32,767.92
13₹ 35,498.58
14₹ 38,229.24
15₹ 40,959.90

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 2,730.66

₹ 2,730.66 Each (Supplied in a Tube) (Exc. GST)

₹ 3,222.18

₹ 3,222.179 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₹ 2,730.66
2₹ 5,461.32
3₹ 8,191.98
4₹ 10,922.64
5₹ 13,653.30
6₹ 16,383.96
7₹ 19,114.62
8₹ 21,845.28
9₹ 24,575.94
10₹ 27,306.60
11₹ 30,037.26
12₹ 32,767.92
13₹ 35,498.58
14₹ 38,229.24
15₹ 40,959.90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

200°C

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more