STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

₹ 1,457,590.00

₹ 1,457.59 Each (On a Reel of 1000) (Exc. GST)

₹ 1,719,956.20

₹ 1,719.956 Each (On a Reel of 1000) (inc. GST)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

1000

Available in multiples of 1000
1000₹ 1,457,590.00
2000₹ 2,915,180.00
3000₹ 4,372,770.00
4000₹ 5,830,360.00
5000₹ 7,287,950.00
6000₹ 8,745,540.00
7000₹ 10,203,130.00
8000₹ 11,660,720.00
9000₹ 13,118,310.00
10000₹ 14,575,900.00
11000₹ 16,033,490.00
12000₹ 17,491,080.00
13000₹ 18,948,670.00
14000₹ 20,406,260.00
15000₹ 21,863,850.00

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 1,457,590.00

₹ 1,457.59 Each (On a Reel of 1000) (Exc. GST)

₹ 1,719,956.20

₹ 1,719.956 Each (On a Reel of 1000) (inc. GST)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000₹ 1,457,590.00
2000₹ 2,915,180.00
3000₹ 4,372,770.00
4000₹ 5,830,360.00
5000₹ 7,287,950.00
6000₹ 8,745,540.00
7000₹ 10,203,130.00
8000₹ 11,660,720.00
9000₹ 13,118,310.00
10000₹ 14,575,900.00
11000₹ 16,033,490.00
12000₹ 17,491,080.00
13000₹ 18,948,670.00
14000₹ 20,406,260.00
15000₹ 21,863,850.00

sticker-1112

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more