N-channel MOSFET,IRF640 18A 200V

RS Stock No.: 485-9165Brand: STMicroelectronicsManufacturers Part No.: IRF640
View all in MOSFETs

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

15.75mm

Width

4.6mm

You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBFBrand: Vishay
₹ 121.729Each (In a Tube of 50) (Exc. GST)
Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 5) (Exc. GST)

N-channel MOSFET,IRF640 18A 200V

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

Each (In a Pack of 5) (Exc. GST)

N-channel MOSFET,IRF640 18A 200V
Stock information temporarily unavailable.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Please check again later.

You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBFBrand: Vishay
₹ 121.729Each (In a Tube of 50) (Exc. GST)

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

15.75mm

Width

4.6mm

You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBFBrand: Vishay
₹ 121.729Each (In a Tube of 50) (Exc. GST)