Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
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Stock information temporarily unavailable.
₹ 626,572.80
₹ 34,809.60 Each (In a Tray of 18) (Exc. GST)
₹ 739,355.90
₹ 41,075.328 Each (In a Tray of 18) (inc. GST)
18
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 626,572.80
₹ 34,809.60 Each (In a Tray of 18) (Exc. GST)
₹ 739,355.90
₹ 41,075.328 Each (In a Tray of 18) (inc. GST)
Stock information temporarily unavailable.
18
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
