Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

RS Stock No.: 122-0391Brand: Semikron DanfossManufacturers Part No.: SEMiX303GB12E4pDistrelec Article No.: 30122437
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Technical Document

Specifications

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Configuration

Series

Package Type

SEMiX®3p

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Maximum Operating Temperature

+175 °C

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Width

62.4mm

Product details

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₹ 20,430.04

₹ 20,430.04 Each (Exc. GST)

₹ 24,107.45

₹ 24,107.45 Each (inc. GST)

Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 20,430.04

₹ 20,430.04 Each (Exc. GST)

₹ 24,107.45

₹ 24,107.45 Each (inc. GST)

Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Configuration

Series

Package Type

SEMiX®3p

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Maximum Operating Temperature

+175 °C

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Width

62.4mm

Product details

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more