Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

RS Stock No.: 121-6899Brand: Renesas ElectronicsManufacturers Part No.: RJP4010AGE-01#P5
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Technical Document

Specifications

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Stock information temporarily unavailable.

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Technical Document

Specifications

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more