Technical Documents
Specifications
Brand
Renesas ElectronicsMount Type
Surface
Product Type
Photocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Magazine
Number of Pins
4
Package Type
Gull Wing
Input Current Type
DC
Typical Rise Time
3μs
Maximum Input Current
400mA
Isolation Voltage
5000Vrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
400%
Maximum Operating Temperature
110°C
Minimum Current Transfer Ratio
50%
Standards/Approvals
EN, CSA, UL
Typical Fall Time
5μs
Series
PS
Automotive Standard
No
Product Details
The Renesas Electronics optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. It has high isolation voltage.
Stock information temporarily unavailable.
₹ 5,946.00
₹ 59.46 Each (In a Tube of 100) (Exc. GST)
₹ 7,016.28
₹ 70.163 Each (In a Tube of 100) (inc. GST)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 5,946.00
₹ 59.46 Each (In a Tube of 100) (Exc. GST)
₹ 7,016.28
₹ 70.163 Each (In a Tube of 100) (inc. GST)
Stock information temporarily unavailable.
100
| Quantity | Unit price | Per Tube |
|---|---|---|
| 100 - 100 | ₹ 59.46 | ₹ 5,946.00 |
| 200 - 400 | ₹ 56.32 | ₹ 5,632.00 |
| 500 - 900 | ₹ 54.78 | ₹ 5,478.00 |
| 1000 - 1900 | ₹ 54.04 | ₹ 5,404.00 |
| 2000+ | ₹ 52.62 | ₹ 5,262.00 |
Technical Documents
Specifications
Brand
Renesas ElectronicsMount Type
Surface
Product Type
Photocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Magazine
Number of Pins
4
Package Type
Gull Wing
Input Current Type
DC
Typical Rise Time
3μs
Maximum Input Current
400mA
Isolation Voltage
5000Vrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
400%
Maximum Operating Temperature
110°C
Minimum Current Transfer Ratio
50%
Standards/Approvals
EN, CSA, UL
Typical Fall Time
5μs
Series
PS
Automotive Standard
No
Product Details
The Renesas Electronics optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. It has high isolation voltage.
