onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Width
1.35mm
Transistor Material
Si
Length
2.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₹ 375.40
₹ 18.77 Each (Supplied on a Reel) (Exc. GST)
₹ 442.97
₹ 22.149 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
20
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 375.40
₹ 18.77 Each (Supplied on a Reel) (Exc. GST)
₹ 442.97
₹ 22.149 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
20
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Width
1.35mm
Transistor Material
Si
Length
2.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products