Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 227.48
Each (In a Tube of 30) (Exc. GST)
₹ 268.426
Each (In a Tube of 30) (Including GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 227.48
Each (In a Tube of 30) (Exc. GST)
₹ 268.426
Each (In a Tube of 30) (Including GST)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | ₹ 227.48 | ₹ 6,824.40 |
60 - 120 | ₹ 222.93 | ₹ 6,687.90 |
150 - 270 | ₹ 191.68 | ₹ 5,750.40 |
300+ | ₹ 189.25 | ₹ 5,677.50 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.